- doping process for Si solar cells
- up to 4 inch wafer
- max 1150 C, H2, O2, N2 gas
- micro-patterning process
- metallization step for Si solar cells
- up to 4 inch wafer
- wet etch/ wet cleaning process
- Auto quick dump rinser (QDR)
- with DI generator
- moisture & Oxygen control system
(1 ppm > O2, H2O)- for 1.5 Person (3 Glove ports)
- thermal evaporator @ Glove box
- up to 100 mm x 100 mm Subst.
- 2 source materials available
- Max temp.: up to 400 'C
- 600W HCP generator
- 4 inch wafer
- passivation layer: Al2O3, TiO2, Si3N4
- solar cell efficiency measurement
- class AAA light source
- up to 156 mm x 156 mm
- solar cell Quantum efficiency measurement
- wavelength from 400 to 1100 nm
- WCT-120 - Sinton Instruments
- minority carrier lifetime measurement
- calibrated PL lifetime curve alongside a calibrated QSSPC lifetime curve
- SUNS-VOC - Sinton Instrument
- IV curve of the diode without the effects of series resistance
- wavelength from 400 to 1100 nm
- HF vapor-phase etch process
- with Temperature controller (< 50 C)
- for meta-assisted chemical etch
- 6 wavelengths (Film Sense)
- 405 – 950 nm spectral range
- Sample sizes up to 200 mm dia. and 20 mm in thickness
- up to 6000 rpm
- up to 8 inch wafer
- x2000 magnification
- with CMOS camera
- current-voltage characterization of microdevices
- 4 units of microprobes
- with optical microscope
- Dicing Area : X-axis: 8", Y-axis: 8"
- Dicing Depth: depended on cutting blade diameter:
- Rotation: 180° by the motor (rotate speed/degree programmable)
- MAX: 50 ml, 6 tubes
- up to 4000 rpm
- Temp: max 70 'C
- heating power: 150 W
- frequency: 40 KHz
- Temp: max 250 'C
- with rotary pump
- Process Mode: PE
- Chameber: W.140 x D.200 x H.110 (mm)
- Generator: 20~100kHz
- Max.: 100W